Channel Type
P
 
Maximum Continuous Drain Current
74 A
 
Maximum Drain Source Voltage
55 V
 
Series
HEXFET
 
Package Type
TO-220AB
 
Mounting Type
Through Hole
 
Pin Count
3
 
Maximum Drain Source Resistance
20 mΩ
 
Channel Mode
Enhancement
 
Maximum Gate Threshold Voltage
4V
 
Minimum Gate Threshold Voltage
2V
 
Maximum Power Dissipation
200 W
 
Transistor Configuration
Single
 
Maximum Gate Source Voltage
-20 V, +20 V
 
Maximum Operating Temperature
+175 °C
 
Transistor Material
Si
 
Length
10.54mm
 
Number of Elements per Chip
1
 
Typical Gate Charge @ Vgs
180 nC @ 10 V
 
Width
4.69mm
 
Height
8.77mm
 
Forward Diode Voltage
1.6V
 
Minimum Operating Temperature
-55 °C